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Doping effects in AlGaAs lasers with separate confinement heterostructures (SCH). Modeling optical and electrical characteristics with Sentaurus TCAD
Modeling optical and electrical AlGaAs lasers
2011/9/1
Optical and electrical characteristics of AlGaAs lasers with sep-arate confinement heterostructures are modeled by using Synopsys’s Sentaurus TCAD and open source software for semi-automatic data anal...
Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
Direct correlation of crystal structure optical properties
2010/11/25
A novel method for the direct correlation at the nanoscale of structural and optical properties
of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zi...
Metamaterial inspired perfect tunneling in semiconductor heterostructures
Metamaterial inspired perfect semiconductor heterostructures
2010/11/24
In this paper we are using formal analogy of electromagnetic wave equation and Schr¨odinger equatio in order to study the phenomenon of perfect tunneling (tunneling with unitary transmittance)in 1D se...
Tunable band gaps in bilayer graphene-BN heterostructures
Tunable band gaps bilayer graphene-BN heterostructures
2010/11/19
We investigate band-gap tuning of bilayer graphene between hexagonal boron nitride sheets,
by external electric elds. Using density functional theory, we show that the gap is continuously tunable fr...
Strain-mediated magnetoelectric coupling in magnetostrictive/piezoelectric heterostructures and resulting high frequency effects
Strain-mediated magnetoelectric magnetostrictive/piezoelectric heterostructures high frequency effects
2010/11/19
Magnetoelectric coupling terms are derived in piezoelectric/magnetostrictive (multiferroic) thin film heterostructures using Landau-Ginzburg free energy expansions in terms of strain and by con-sideri...
Electronic correlations in short period (CrAs)$_n$/(GaAs)$_n$ ferromagnetic heterostructures
Electronic correlations ferromagnetic heterostructures
2010/11/24
We investigate half-metallicity in [001] stacked (CrAs)n/(GaAs)n heterostructures with n ≤ 3
by means of a combined many-body and electronic structure calculation. Interface states in the
presence o...
High-energy long-lived resonance of electrons in fractal-like semiconductor heterostructures
High-energy long-lived resonance electrons fractal-like semiconductor heterostructures
2010/11/9
A fractal-like alignment of quantum wells is shown to accommodate resonant states with long lifetimes. For the parameters of the semiconductor heterostructure GaAs/Al$_{0.4}$Ga$_{0.6}$As with the wel...
Electronic and Shallow Impurity States in Semiconductor
Heterostructures Under an Applied Electric Field
heterostructures electric field impurity states
2007/8/15
2005Vol.44No.2pp.375-380DOI:
Electronic and Shallow Impurity States in Semiconductor
Heterostructures Under an Applied Electric Field
ZHOU Hai-Yang,1 GU Shi-Wei,2 and SHI Yao-Min...
期刊信息
篇名
Calculation of excitonic transitions in ZnO/MgZnO quantum-well heterostructures
语种
英文
撰写或编译
作者
Xu TN,Wu HZ(吴惠桢),Qiu DJ,et al
第一作者单位
刊物名称
CHINESE PHYSICS LETTERS
页面
20 (10): 1829-1832 O
出版日期
20...
Shubnikov-de Haas Oscillations in Digital Magnetic Heterostructures
Shubnikov-de Haas Oscillations Digital Magnetic Heterostructures
2010/10/21
In this paper we theoretically investigate the magnetic-field and temperature dependence of the Shubnikov-de Haas oscillations in group II-VI modulation-doped Digital Magnetic Heterostructures. We sel...
Single Mode Optical Radiation Distribution and Reflectivity Calculations in Novel-Hot Electron Light Emission and Lasing In Semiconductor Heterostructures VCSELs
Optical Radiation Distribution Electron Light Emission Reflectivity Calculations
2010/4/12
In this work, we calculate the power reflectivity in vertical cavity surface emitting lasers (VCSELs) using a new method. In VCSELs, the stop band of the reflectivity spectrum should exhibit a dip at ...
Carrier Transport and Band Offsets in Two Dimensional Heterostructures
Band Offsets Two Dimensional Heterostructures
2010/4/16
Advances in the low dimensional heterojunction device technology cannot be complete without adequate and reliable analytic model for determining interface properties such as band offsets needed to stu...