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Zn空位及Cu掺杂对ZnTe电子结构及光学性质的影响
ZnTe 第一性原理 电子结构 光学性质
2013/9/27
利用基于密度泛函理论框架下的平面波赝势法和广义梯度近似,计算分析了ZnTe结构本体、掺入杂质Cu(Zn0.875Cu0.125Te)及Zn空位(Zn0.875Te)体系的晶格常数及缺陷形成能,得到了不同体系的态密度、能带 结构、集居数、介电函数、损失函数、吸收光谱、光电导率、复折射率及反射率。结果表明,掺杂Cu和Zn空位对ZnTe的晶胞参数、能带结构以及光学性质都产生了一定程度的影响。由于空位及杂...
Pulsed THz radiation due to phonon-polariton effect in [110] ZnTe crystal
Pulsed THz radiation phonon-polariton effect ZnTe crystal Optics
2012/5/31
Pulsed terahertz (THz) radiation, generated through optical rectification (OR) by exciting [110] ZnTe crystal with ultrafast optical pulses, typically consists of only a few cycles of electromagnetic ...
Observation of Superfluorescence from a Spontaneous Coherence of Excitons in ZnTe Crystal: Evidence for Bose-Einstein Condensation of Excitons?
Superfluorescence Spontaneous Coherence Excitons ZnTe Crystal Bose-Einstein Condensation
2011/8/11
Abstract: Superfluorescence (SF) is the emission from a dense coherent system in population inversion, formed from an initially incoherent ensemble. This is characterised by an induction time (t_D) fo...
ZnTe(ZnTe∶Cu)多晶薄膜的XPS研究
ZnTe多晶薄膜 光电子能谱 退火 CuxTe
2009/5/8
用共蒸发法在室温下制备了ZnTe及ZnTe∶Cu多晶薄膜，测量了电导率温度曲线，发现不掺杂的ZnTe薄膜的暗电导随温度的增加而线形增加，呈常规的半导体材料特征;掺Cu的ZnTe薄膜在温度较低时，lnσ随温度升高而缓慢增加，随后缓慢降低，达到一极小值，当温度继续升高时又陡然增加，呈现异常现象。用XPS研究了N2气氛下退火前后表面状态，发现不掺Cu的ZnTe薄膜呈现富Te现象。掺Cu后Te氧化明显，以...
Electrical Properties of Hydrogen Transport VPE Grown n-CdTe Epilayers on ZnTe/GaAs
CdTe Electrical properties Hall effect H2T-VPE X-ray detectors
2010/4/12
Electrical characterisation of n-CdTe epilayers grown by hydrogen transport vapour phase epitaxy (H2T-VPE) on insulating ZnTe/(100)GaAs substrates through the temperature dependent Hall measurements i...