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Interface Roughness-Induced Intrassubband Scattering in a Quantum Well Under an Electric Field
interface roughness intersubband
2010/4/13
The scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied perpendicular to the layer plane. It is found that the ...
Electron Transport in GaAs Quantum Wells: Effect of Interface Roughness Scatterin
interface roughness electron transport
2010/4/16
The importance of interface roughness (IFR) scattering of electrons and LO-phonons for electron transport in semiconductor quantum wells is discussed. Modulation doping of quantum wells minimizes the ...