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Simulation of optically controlled GaN (Gallium Nitride) using analytical modeling of high frequency response and switching applications
Modeling analysis optical control gallium nitride ion dose ion energy ion range of parameters
2014/12/31
In this project, an analytical modeling of optically controlled Gallium Nitride has been presented here for an analysis of extrinsic and intrinsic parameters such as, gate capacitances including both ...
Study of analytical determination of parasitic resistances in Gallium Nitride (GaN) MESFET'S
Analysis model gallium nitride metal semiconductor should the transistor drainage electrical parameters of the resistance
2014/12/31
In this project, a physics based analytical model is proposed for Gallium Nitride (GaN) based metal semiconductor field effect transistor (MESFET) by using MATLAB software. The analytical model has be...
Surface photocurrent nonuniformities in MSM detectors fabricated in gallium nitride heteroepitaxial layers
metal–semiconductor–metal (MSM) UV detector
2011/5/10
A correlation of surface potential maps and photocurrent distribution images in metal–semiconductor–metal (MSM) structures allows to notice spatial nonuniformities in detector principle of operation. ...
Blue Light Emitting Device made of cubic phase gallium nitride
LED blue LDs GaN cubic phase GaAs
2010/7/15
A metastable cubic phase GaN blue light emitting device has been fabricated. It has
demonstrated the feasibility of growing device quality metastable cubic GaN films on GaAs
substrates. A very simpl...