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Researchers from the University of Illinois at Urbana-Champaign have demonstrated a new approach to modifying the light absorption and stretchability of atomically thin two-dimensional (2D) materials ...
We present a vertical-illumination-type 100% Ge-on-Si photodetector with the responsivity up to 0.93 A/W at λ~1.55 μm. The 10Gbps photoreceiver with a fabricated 60 μm-diameter device exhibits high se...
We report the 1.27 μm AlInAs APD with high responsivity of 0.93 A/W and wide bandwidth of 8.3 GHz at a multiplication factor of 10 optimized for 10G-EPON (OLT).
We present an evanescent waveguide InGaAs/InGaAsP UTC PD with respectively a bandwidth > 50 GHz, a responsivity of 0.55 A/W and an IP3 of 19.7 dBm at 10 mA and 20 GHz.
This paper presents the spectral responsivity scale between 250–2500 nm developed by the National Metrology Institute of Turkey (UME). For that purpose silicon photodiode based trap detector and elect...

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