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Ge/Si avalanche photodiodes with record high gain-bandwidth and sensitivity for communication wavelength and high data rate, 10Gbps and 40Gbps, is demonstrated. These devices can be monolithically int...
Use of a microcontroller-based bias board for balanced photodiodes improves even-order distortion cancellation due to voltage dependent responsivity nonlinearities.The bias board improves the second o...
We report the 1.27 μm AlInAs APD with high responsivity of 0.93 A/W and wide bandwidth of 8.3 GHz at a multiplication factor of 10 optimized for 10G-EPON (OLT).
We report improved output power and linearity characteristics of two InP/InGaAs partially-depleted-absorber photodiodes monolithically integrated with a Wilkinson power combiner and stub tuner in the ...
Ge on Si p-i-n photodiodes are characterized on wafer in the time domain at a wavelength of 1550 nm.The photodiode output signal is sampled by a flip flop. At a bit rate of 25 Gbit/s and a Pseudo Rand...
A Si APD was fabricated by standard 0.18 μ m CMOS process. The maximum avalanche gain was 224 for only 8 V bias. The bandwidth was 1.6 GHz for low avalanche gain and 800 MHz for large avalanche gain.

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