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UCLA and USC scientists devise breakthrough technique for mapping temperature in tiny electronic devices
UCLA and USC scientists mapping temperature tiny electronic devices
2015/3/4
Overheating is a major problem for the microprocessors that run our smartphones and computers. But a team of UCLA and USC scientists have made a breakthrough that should enable engineers to design mic...
VIRTEX 4 LX200 automated temperature stress test serial interface and test control logic design implementation
Automatic test hot chamber temperature pressure equipment temperature
2014/12/31
The overall project is to create a system that automatically tests the internal components of Xilinx Virtex 4 LX200 device, while the device is running in a thermal chamber at temperatures that stress...
The Measurement of Internal Temperature Anomalies in the Body Using Microwave Radiometry and Anatomical Information: Inference Methods and Error Models
Microwave Radiometry Temperature Anomaly Detection Medical
2014/12/8
The ability to observe temperature variations inside the human body may help in detecting the presence of medical anomalies. Abnormal changes in physiological parameters (such as metabolic and blood p...
Optimisation of Temperature Fields of Microsystems with Self-Organising Neural Nets
Thermal problems Temperature fields optimisation Neural nets Microsystems Topography optimisation
2010/12/7
Thermal modelling and optimisation of parameter distributed systems is a rather time-consuming process. In this paper the problem of optimisation of temperature fields of VLSI circuits and systems is ...
Ultra-Low Temperature Coefficient of Capacitance (Tcc) of the SrSnO3-Based Electrical Components
Strontium metastannate Capacitor component Electroceramics Dielectrics Complex plane analysis
2010/12/7
The perovskite-structured SrSnO3 possessing steady capacitance over the temperature range between 27°C and 300°C in a frequency domain spanning nearly four decades has been evaluated. The samples inve...
Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide
Negative differential resistance (NDR) Liquid phase chemical-enhanced oxide (LPECO)
2010/12/7
First observation of switching behavior is reported in GaAs metal-insulator-p-n+ structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with ...
THE BEHAVIOR OF ASYMMETRIC FRONTAL COUPLINGS WITH PERMANENT MAGNETS IN MAGNETIC POWDER AND HIGH TEMPERATURE ENVIRONMENTS
permanent magnets permanent magnet couplings
2010/1/12
The main purpose of this paper is the comparative analysis of the behavior of
frontal couplings with Nd-Fe-B permanent magnets in difficult environments, specific
to metallurgy–such as environments ...
Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep Submicrometer MOSFET'S
Submicrometer MOSFET’s Impact ionization Substrate current Temperature Channel length
2010/12/8
In this paper, a detailed experimental study of channel length, drain voltage and temperature dependence of substrate current Isub in submicrometer MOSFET's is presented. Impact ionization rate α is r...
A Study on Effect of Line Width, Composition and Firing Temperature on the Microstripline Properties
Fritless thick film paste Microstriplines Transmittance
2010/12/8
The transmittance and reflectance of microstriplines of different widths, fabricated by thick film and thin film technology are studied in the X and Ku band (8–18 GHz). The fritless thick film Ag past...
GaN based FET devices represent at present the solid state power sources of highest microwave output power. Their materials structure and technology is briefly reviewed and their mitations and problem...
Fabrication and Characterization of Multilayer Capacitors Buried in a Low Temperature Co-Fired Ceramic Substrate
Capacitor embedded low temperature co-fired ceramic
2010/12/10
Multilayer ceramic capacitors designed to be embedded in a low temperature co-fired ceramic substrate have been successfully fabricated. Low and high value capacitors were respectively embedded in the...
The a-SiC/c-Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor
Heterojunction temperature sensors microelectronic devices
2010/12/10
The a-SiC/c-Si(n) isotype heterojunction has been studied as a temperature sensor by measuring its reverse current-voltage (IR−V) and reverse voltage-temperature (V-T) characteristics, as well a...
A Brief Study on Energy in Itinerant-Electron Metamagnetic Materials at Very Low Temperature
Energy Itinerant-Electron Metamagnetic Materials Low Temperature
2010/12/10
Electronic energy is calculated explicitly for itinerant-electron metamagnetic materials at very low temperature. This calculation involves bandwidth and consequently volume, and it has been performed...
Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature
Sputtered Germanium-Doped Indium Tin Oxide Films Low Deposition Temperature
2010/12/16
Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. ...
The Effect of Various Factors on the Resistance and TCR of RuO2 Thick Film Resistors—Relation Between the Electrical Properties and Particle Size of Constituents, the Physical Properties of Glass and Firing Temperature
RuO2 Thick Film Resistors Constituents Glass and Firing Temperature
2010/12/21
Thick film resistors were prepared with different variables, they included various conductive particle sizes, glass particle sizes, glass softening temperatures, thermal expansion coefficients of the ...