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CGS Based Solar Cells with In2S 3 Buffer Layer Deposited by CBD and Coevaporation
Buffer layer In2S3 CBD chalcopyrite structural properties Solar cell
2010/6/30
In this paper we investigated In2S3 as substitute for CdS, which is conventionally used as buffer layer in chalcopyrite based solar cells. In2S3 thin films were deposited by CBD and co-evaporation met...
Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD
InAs0.9Sb0.1 MOCVD Two-step growth method
2011/12/15
InAs0.9Sb0.1 epilayers are grown on GaAs (001) substrates by metal organic chemical vapor deposition (MOCVD). In order to relax compressive strain caused by lattice mismatch between InAs0.9Sb0.1 and G...
Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD
In0.82Ga0.18As Buffer layer MOCVD
2011/12/15
The In0.82Ga0.18As grown on InP (1 0 0) substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with twostep growth method was investigated. It was analyzed that the effect of In ...