搜索结果: 1-15 共查到“Heterojunction”相关记录15条 . 查询时间(0.062 秒)
Millimeter Wave Indium Phosphide Heterojunction Bipolar Transistors: Noise Performance and Circuit Applications
InP HBT LNA Modelling Transistor Small-signal modelling
2014/12/8
The performance of III-V heterojunction bipolar transistors (HBTs) has improved significantly over the past two decades. Today’s state of the art Indium Phosphide (InP) HBTs have a maximum frequency o...
The Improvement of Bulk-Heterojunction Order in Polymer Photovoltaic Device
Polymer photovoltaic device Bulk-heterojunction Annealing method
2012/4/12
The blend morphology and vertical arrangement are critical to the performance of organic bulk-heterojunction photovoltaic devices. In the present paper, the authors proposed a new annealing method tha...
Barrier-Free Tunneling in a Carbon Heterojunction Transistor
Barrier-Free Tunneling Carbon Heterojunction Transistor
2010/11/23
Recently it has been experimentally shown that a graphene nanoribbon (GNR) can be obtained
by unzipping a carbon nanotube (CNT). This makes it possible to fabricate all-carbon
heterostructures that ...
The Effect of Collector Doping on InP-Based Double Heterojunction Bipolar Transistors
Doping InP-Based Double Heterojunction Bipolar Transistors
2009/7/28
High current effects on double heterojunction bipolar transistor (DHBT) performance were investigated. Three DHBTs with different collector doping densities were grown and processed. DC and RF measure...
Structural, electrical and optical properties of AZO/SiO2/p-Si SIS heterojunction prepared by magnetron sputtering
Al-doped ZnO sputtering SIS heterojunction current–voltage (I–V ) characteristics
2011/5/6
ZnO thin films doped with aluminum (AZO) were deposited on silicon dioxide covered type
texturized Si substrates by radio frequency magnetron sputtering, to fabricate AZO/SiO2/p-Si
heterojunction, a...
Characterization of p-type wide band gap transparent oxide for heterojunction devices
Applied sciences Pure sciences Transparent oxide films Wide band gap semiconductors Transparent oxide Heterojunction devices
2014/11/7
Transparent p-type CuCr1-x Mgx O2 wide band gap oxide semiconductor thin films were deposited over quartz substrates by chemical spray pyrolysis technique using metalloorganic precursors. A mechanism ...
Spin-Tunneling Time in Ferromagnetic/Semiconductor/Ferromagnetic Three-Terminal
Heterojunction in the Presence of Rashba Spin-Orbit Coupling
spin-tunneling time three-terminal heterojunction spin-orbit coupling
2007/8/15
2006Vol.46No.5pp.945-951DOI:
Spin-Tunneling Time in Ferromagnetic/Semiconductor/Ferromagnetic Three-Terminal
Heterojunction in the Presence of Rashba Spin-Orbit Coupling
ZHANG Yin...
专著信息
书名
SiCGe/SiC Heterojunction and Its MEDICI Simulation of Optoelectronic Characteristics
语种
英文
撰写或编译
作者
吕 政,陈治明,蒲红斌
第一作者单位
出版社
Chinese Physics, 2004年底审稿通过,已录用待发表
出版地
出版日期
2004年
月
日
标准书号
介质类型
页数
字...
期刊信息
篇名
Rashba spin-orbit effect on traversal time in ferromagnetic/semiconductor/ferromagnetic heterojunction
语种
英文
撰写或编译
撰写
作者
Han-Chun Wu,Yong Guo,Xin-Yi Chen,Bing-Lin Gu
第一作者单位
清华大学
刊物名称
Journal o...
Electrical Properties of CdS/Polyaniline Heterojunction
Polyaniline Cadmium sulphide Non-ohmic behaviour Heterojunction
2010/10/13
Conducting polyaniline (PANI) has been synthesized using Sol-gel technique with chemical oxidation process. Chemically prepared cadmium sulphide has been printed on pellet of conducting polyaniline us...
AlGaAs/GaAs heterojunction phototransistor with Zn delta-doped base region
heterojunction phototransistor Zn delta-doped GaAs EC-V measurements photovoltage spectroscopy
2011/4/27
The paper presents the technology and characterisation of n-p-n AlGaAs/GaAs heterojunction phototransistor (HPT) with a thin (50 nm) Zn delta-doped GaAs base region. Such a construction of the HPT tra...
MOCVD-Grown InGa/GaAs Emitter Delta Doping Heterojunction Bipolar Transistors
Delta doping Heterojunction bipolar transistor
2010/12/7
The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75Å undoped spacer layer is investigated. A common emitter curr...
Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor
Thermal Effect Frequency Response Heterojunction Bipolar Power Transistor
2010/12/8
Heterojunction bipolar transistors (HBT) based on Npn AlGaAs/GaAs material system have attracted considerable attention for microwave power and digital applications due to their high speed and high cu...
The a-SiC/c-Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor
Heterojunction temperature sensors microelectronic devices
2010/12/10
The a-SiC/c-Si(n) isotype heterojunction has been studied as a temperature sensor by measuring its reverse current-voltage (IR−V) and reverse voltage-temperature (V-T) characteristics, as well a...
Eects of Post Deposition Treatments on Vacuum Evaporated CdTe Thin Films and CdS=CdTe Heterojunction Devices
Post Deposition Treatments Vacuum Evaporated CdTe Thin Films
2010/4/19
CdTe, CdS thin films and n-CdS/p-CdTe heterostructures have been prepared by conventional vacuum evaporation technique. Some post deposition treatments to optimize the device efficiency have been anal...