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Flash memory is well-known for its inherent asymmetry:the flash-cell charge levels are easy to increase but are hard to decrease.
The E8 Lattice and Error Correction in Multi-Level Flash Memory
E8 Lattice Error Correction Multi-Level Flash Memory
2010/12/14
A construction using the E8 lattice and Reed-Solomon codes for error-correction in flash memory is given. Since E8 lattice decoding errors are bursty, a Reed-Solomon code over GF(28) is well suited. T...