搜索结果: 1-12 共查到“理学 PIN”相关记录12条 . 查询时间(0.099 秒)
为了研究延伸波长In0.83Ga0.17As pin光电二极管的暗电流机制。采用两种不同工艺制备了台面型延伸波长In0.83Ga0.17As pin光电二极管。第一种工艺(M135L-5)是:台面刻蚀后进行快速热退火(RTA)。第二种工艺(M135L-3)是:台面刻蚀前进行快速热退火(RTA)。采用IV测试,周长面积比(P/A),激活能和暗电流成分拟合方法对器件暗电流机制进行分析。结果显示,在22...
基于光照强度的PIN光电二极管响应时间分析
光电二极管 响应速度 结等效模型 光照强度
2014/4/22
在PIN光电二极管应用中发现,光照强度对响应速度具有很大影响。论文研究了光强对响应速度的影响,提出了内部PIN结等效电场模型,并搭建了实验电路对PIN光电二极管在不同光照强度下的响应速度进行检测,验证提出的结模型,很好的解释了光电二极管从无光照到有光照这一过程中,光强越强,响应时间越短;而当光电二极管从有光照到无光照这一过程中,光强越强,响应时间越长这一现象。提出的模型和实验验证为光电二极管在响应...
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Galaxies pin down dark energy(图)
Galaxies dark energy
2010/11/30
A new way of measuring the geometry of the universe confirms that dark energy dominates the cosmos and bolsters the idea that this unusual form of energy is described by Einstein's cosmological consta...
Pin^-(2)-monopole equations and intersection forms with local coefficients of 4-manifolds
4-manifold intersection form Seiberg-Witten equations
2010/12/8
We introduce a variant of the Seiberg-Witten equations, Pin−(2)-monopole equations, and give its applications to intersection forms with local coefficients of 4-manifolds. The first application ...
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Physicists in the Netherlands have confirmed that graphite is a permanent magnet at room temperature and have pinpointed where the high-temperature ferromagnetism comes from for the first time. The re...
Study of the PIN detector's radiation tolerance
PIN detector radiation damage irradiation dose
2009/8/14
PIN detectors have been extensively used to detect charged particles and X-ray. The new type PIN detectors were irradiated by different energy protons, and their irradiation tolerance was investigated...
Thermal experiment of silicon PIN detector
thermal effects PIN detector radiation detection energetic particle space environment
2009/8/14
The experiment of this paper is the thermal test of the leakage current of silicon PIN detector. Raising temperature may cause the detector to increase leakage current, decrease depletion and increase...
具有统计增强效应的(CF2)n-PIN夹层探测阵列
统计增强 (CF2)n-PIN夹层 半导体探测器
2009/7/27
采用灵敏区尺寸为φ60mm, 厚度1000μm的大面积电流型厚PIN半导体探测器+聚四氟乙烯片+PA101低噪声放大器, 构建了灵敏度为10-11C.cm2,具有显著统计增强效应的夹层高灵敏PIN探测阵列. 采用Monte-Carlo数值模拟方法, 研究了该探测阵列的统计增强效应和对γ射线探测灵敏度. 该阵列在极低强度脉冲γ射线探测中具有明显的统计增强效应, 且能量响应平坦, 单个阵列探测范围可...
对γ不灵敏的PIN脉冲中子探测器
PIN探测器 脉冲中子测量 n,γ混合辐射场
2009/6/10
将PIN半导体制作成特殊组合结构的PIN脉冲中子探测器,利用三通道装置产生的γ脉冲和中子发生器DT反应产生的14MeV中子脉冲对探测器进行了研究.结果表明:PIN脉冲中子探测器对脉冲γ辐射不灵敏,对脉冲中子辐射的灵敏程度依赖于中子辐射转换靶,探测器的信噪比达到30∶1,是一种在中子、γ混合脉冲辐射场中测量脉冲中子的新型探测器
组合式Si-PIN 14MeV中子探测器
Si-PIN半导体探测器 灵敏度 n/γ分辨 时间响应
2008/5/14
提出了一种在多片Si-PIN探测器中间用2mm厚的聚乙烯作为灵敏度增强介质,采用加法电路模式进行信号输出的组合式新型DT聚变中子(14MeV)探测技术原理. 这种组合的主要特点有: 1)大幅度提高了Si-PIN探测器的中子灵敏度和测量统计性; 2)提高了探测器的n/γ分辨本领; 3)在实现多个探测器信号相加的同时,组合探测器相对于单片探测器时间响应没有明显改变. 从实验及理论上对组合探测器的14...
利用Si–PIN探测器测量DPF装置中子产额
Si–PIN探测器 等离子焦点 中子产额 中子灵敏度
2008/1/29
介绍了Si-PIN中子探测器的结构和测量原理,分析了探测器对14MeV中子的灵敏度.利用该探测器测量了等离子焦点装置的D-T脉冲中子产额,实验结果与SDIN500探测器测量结果在5?%不确定度范围内一致
A correspondence between various Pin-type structures on a compact surface and quadratic (Iinear) forms on its homology is constructed. Sum of structures is defined and expressed in terms of these quad...