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Researchers claim to have fabricated the first all-optical transistor on a silicon chip. This device allows the transmission of light emitted by one laser to be governed by the intensity of another. T...
Barrier-Free Tunneling in a Carbon Heterojunction Transistor
Barrier-Free Tunneling Carbon Heterojunction Transistor
2010/11/23
Recently it has been experimentally shown that a graphene nanoribbon (GNR) can be obtained
by unzipping a carbon nanotube (CNT). This makes it possible to fabricate all-carbon
heterostructures that ...
Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction
Strain determination Si channel field effect transistor
2010/11/24
SiGe islands are used to induce tensile strain in the Si channel of Field E ect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ray di raction experime...
Physicists in the US have made the fastest graphene transistor ever, with a cut-off frequency of 100 GHz. The device can be further miniaturized and optimized so that it could soon outperform conventi...
ELDRS and dose-rate dependence of vertical NPN transistor
bipolar junction transistor ELDRS effect dose-rate dependence
2009/8/17
The enhanced low-dose-rate sensitivity (ELDRS) and dose-rate dependence of vertical NPN transistors are investigated in this article. The results show that the vertical NPN transistors exhibit more de...
Photo Organic Field Effect Transistor´s Properties
Organic Field Effect Transistor Copper Phthalocyanine Metal-Semiconductor Schottky Junction Phototransistor
2010/4/9
A thin organic films of p-type semiconducting copper phthalocynanine (CuPc) film and semitransparent Al film were deposited in sequence by vacuum evaporation on glass substrate with Ag source and drai...