搜索结果: 1-7 共查到“物理学 feasibility”相关记录7条 . 查询时间(0.125 秒)
FEASIBILITY AND PROBLEMS OF TLS IN MODELING ROCK FACES FOR HAZARD MAPPING
Terrestrial Laser Scanning Landslides Geology Monitoring Hazard Mapping
2015/8/13
In the paper we focus on the application of TLS to carry out the geometric surveying of rock faces to derive their DSM for
simulating possible paths of falling rocks and then drawing hazard maps. Af...
Conditions for the feasibility of multiple rolling for mechanical systems with multiple contact points
mechanical systems multiple contact points Conditions for the feasibility of multiple rolling
2011/9/1
We illustrate a theoretical procedure determining necessary conditions for which simultaneous pure rolling kinetic constraints acting on a mechanical system can be fulfilled. We also analyze the suffi...
Feasibility study of dark matter searches with the CUORE experiment
dark matter the CUORE experiment
2011/4/7
Feasibility study of dark matter searches with the CUORE experiment 。
Feasibility Studies for the Panda Experiment at Fair
Panda Experiment Facility for Anti-proton and Ion Research
2010/3/15
PANDA, the detector to study AntiProton ANnihilations at DArmstadt, will be installed at the future international Facility for Anti-proton and Ion Research (FAIR) in Darmstadt, Germany. The PANDA phys...
Feasibility study for the measurement of Bc meson mass and lifetime with the general purpose detector at the LHC
Bc mass lifetime LHC general purpose detector
2009/7/31
In this paper a feasibility study of the Bc meson to measure its mass and lifetime is described with the general purpose detector at the LHC. The study solely concentrated on the J/ψπ+, J/ψ→μ+μ－ deca...
Feasibility of the GaInP/InGaAs/GaAs System for Modulation Doped Field-Effect Transistors
GaInP/InGaAs/GaAs System Modulation Doped Field-Effect Transistors
2010/4/16
Si-doped single Ga0.51In0.49P layers and GaInP/InGaAs/GaAs modulation doped field-effect transistor structures grown by gas source molecular beam epitaxy were characterized in detail through Hall-Effe...
Feasibility of Fabrication of Heteroepitaxial Gex Si1-x/Si(111) structure by Pulsed Nd: YAG Laser
Heteroepitaxial Gex Si1-x/Si(111) Pulsed Nd: YAG Laser
2010/4/15
Heteroepitaxial Gex Si1-x alloy layers have been formed by 10 ms and 300 m s laser pulse induced mixing of pure germanium films and Si(111) substrates where Ge films of thickness (500-1250) Å ar...