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Effect of non-abrupt doping and interfacial profiles on the carrier sheet density in one-side modulation-doped GaN/AlGaN quantum wells
non-abrupt doping interfacial profiles carrier sheet density quantum wells
2010/7/5
The results of an accurate theoretical study on the effects of non-abrupt doping and interfacial profiles on the electron sheet density in one-side modulation-doped wurtzite GaN/AlGaN single quantum w...
Vibration Spectra of Quasi-confined
Optical Phonon Modes in an Asymmetric Wurtzite
AlxGa1-xN/GaN/AlyGa1-yN Quantum Well
quasi-confined optical phonon asymmetric wurtzite QW
nitride-based semiconductor
2007/8/15
2007Vol.47No.2pp.349-354DOI:
Vibration Spectra of Quasi-confined
Optical Phonon Modes in an Asymmetric Wurtzite
AlxGa1-xN/GaN/AlyGa1-yN Quantum Well
ZHANG Li1,2 and SHI Jun-Jie1
...
Atomic Design of Polarity of GaN Films Grown
on SiC(0001)
polarity total energy calculation adlayer interface
2007/8/15
2004Vol.41No.4pp.609-613DOI:
Atomic Design of Polarity of GaN Films Grown
on SiC(0001)
DAI Xian-Qi,1,2 WU Hua-Sheng,2 XU Shi-Hong,2 XIE Mao-Hai,2 and S.Y. Tong3
1 Physi...
期刊信息
篇名
Observation of quantum-confinement effect with GaN nanoparticles synthesized through a new gas reaction route
语种
英文
撰写或编译
撰写
作者
Y.G.Cao,X.L.Chen,et al
第一作者单位
中国科学院物理研究所
刊物名称
Applied Physics: A...
Band Gap of Cubic AlN, GaN and InN Compounds Under Pressure
Lattice parameter bulk modulus pressure coefficient FP-LAPW, WIEN(2k)
2010/4/9
Numerical simulation based on FP-LAPW calculations is applied to study the lattice parameters, bulk modulus and band gap energy of zinc blende binaries AlN, GaN and InN under hydrostatic pressure. The...
Ab Initio Calculation of the (100) and (110) Surface Phonon Dispersion of GaAs and GaN
the (100) and (110) Surface Phonon GaAs GaN
2010/10/21
In this work, we have calculated ab initio the phonon dynamics of the Ga-rich GaAs (100) (1 £ 1), GaAs (100) (2 £ 1), GaN (100) (1 £ 1), GaAs (110) and GaN (110) surfaces. Our result...