搜索结果: 1-5 共查到“电磁学 a-Si:H”相关记录5条 . 查询时间(0.085 秒)
Characterization of the SnO2/p Contact Resistance and SnO2 Properties in Operating a-Si:H p-i-n Solar Cells
TCO/p contact resistance SnO2 properties a-Si:H p-i-n solar cells
2010/4/13
A method is presented to characterize the TCO/p contact and the TCO sheet resistance in a-Si TCO/p-i-n superstrate devices. It is extremely useful for understanding resistance losses in modulus and di...
Effect of rf power on the electrical properties of glow-discharge a-Si:H
A. Dark conductivity B. Photoconductivity Rf power density D. Activation energy E.Hydrogenated amorphous silicon
2010/4/13
Hydrogenated amorphous silicon films were prepared in an rf glow-discharge system by decomposing undiluted silane at various rf power densities. Dark conductivity and photoconductivity of the films ha...
Kinetics of Light-induced Metastable Defect Creation and Annealing in a-Si:H
a-Si:H Staebler-Wronski effect Light induced metastable defect CPM Photoconductivity Distribution of annealing activation energies
2010/4/13
Constant Photocurrent Method (CPM) and steady state photoconductivity measurements are used to investigate the creation of light-induced metastable defects in a-Si:H at room temperature and their anne...
Modulation Frequency-Dependence of Photocurrent in Amorphous Si:H p-i-n and Chalcogenides
distant-pair Photocurrent
2010/4/13
The effects of modulation frequencies (up to 35 kHz) on the intensity- and temperature-dependence of photocurrent of amorphous (a-) Si:H p-i-n and chalcogenide glasses (a-Se and a-As2Se3) were investi...
The Eect of Exposure Time to Clean Room Air on Characteristic Parameters of Au /Epilayer n-Si Schottky Diodes
capacitance-voltage
2010/4/19
A study has been made on determination and comparison of current-voltage (I-V) and capacitance-voltage (C-V) characteristics parameters of Au/n-Si Schottky barrier diodes (SBDs) with and without thin ...