搜索结果: 1-15 共查到“化学 a-Si:H”相关记录59条 . 查询时间(0.095 秒)
铜包覆多孔硅基材料p-Si@Cu(x)的制备与性能
锂离子电池 多孔硅基材料 铜包覆
2019/1/30
在球形SiO2颗粒表面包覆适量的CuO，经还原得到铜包覆的多孔硅复合材料[p-Si@Cu（x）].利用X射线衍射、扫描电子显微镜、透射电子显微镜和比表面积分析等手段对样品的组成、物相结构、微观形貌和孔结构进行分析，并初步研究了材料的循环性能和倍率性能.结果表明，铜包覆量x=0.05时，在100 mA/g电流密度下，样品的首次放电容量为3596.9 mA·h/g，首次充电容量为2590.7 mA·h...
酸性条件下硅醇盐Si(OCH3)4水解与聚合机理的密度泛函研究（图）
硅醇盐 水解 聚合 密度泛函理论
2013/12/15
用密度泛函方法在B3LYP/6-31G(d,p)基组水平上对反应系统中的所有物种进行全优化,用CPCM溶剂模型在同一基组水平上进行了单点计算,系统研究了硅醇盐前驱体Si(OCH3)4在酸性条件下的水解、聚合机理,阐明了二者的相互竞争关系.研究发现,H2O以氢键或配位键与前驱体结合,然后通过氢转移完成水解;水分子从质子化烷氧基的对面键合并发生水解;第4级水解是H2O从对位驱逐质子化烷氧基,但不能水解...
Comparative Investigation of Mo(CO)6 Adsorption on Clean and Oxidized Si(111) Surfaces
Molybdenum hexacarbonyl SiO2/Si(111) Interaction High-resolution elec-tron energy loss spectroscopy
2012/4/5
Mo(CO)6 adsorption on the clean, oxygen-precovered and deeply oxidized Si(111) surfaces was comparatively investigated by high-resolution electron energy loss spectroscopy. The downward vibrational fr...
Preparation of Aryldiazonium Salt Monolayers on Si(100) Surface by Chemomechanical Method
Chemomechanical Silicon Monolayer Aryldiazonium salt
2012/4/5
Functionalizing and patterning of the silicon surface can be realized simultaneously by the chemomechanical method. The oxide-coated crystalline silicon (100) surface is scratched with a diamond tool ...
Ti-Si介孔分子筛的转晶与控制
Ti-Si分子筛 介孔结构 转晶 共溶剂
2010/2/4
以季铵盐型阳离子Gemini表面活性剂[C16H33(CH3)2N+(CH2)6N+(CH3)2C16H33]•2Br−(GEM16-6-16)为模板剂, 改变n(Ti)/n(Si)比值, 合成了系列Ti-Si介孔分子筛. X射线衍射(XRD)和透射电子显微镜(TEM)等表征结果表明, 在n(Ti)/n(Si)≤0.20时, 分子筛为高度有序六方介孔; 当 n(Ti)/n(...
将Pt/Si-MCM-41用于H2选择催化还原(H2-SCR)消除NO的反应. X射线衍射分析、N2吸附/脱附、氢吸附和透射电镜等分析结果表明，介孔Si-MCM-41具有大的比表面积和孔体积有利于活性组分Pt的分散, Pt/Si-MCM-41催化剂在富氧和80000 h-1空速的条件下，其H2-SCR低温活性在100 ℃达到60.1%，优于Pt/Si-ZSM-5和Pt/SiO2催化剂，其选择...
Structure of Ultra-Thin Diamond-Like Carbon Films Grown with Filtered Cathodic Arc on Si(001)
Structure of Ultra-Thin Diamond-Like Carbon Films Filtered Cathodic Arc on Si(001)
2010/9/17
The structure of 3 nm and 15 nm diamond-like carbon films, grown on Si(001) by filtered cathodic arc, was studied by angle-resolved X-ray photoelectron spectroscopy (ARXPS) and transmission electron m...
The Theoretical Study of Si Core Levels for the Change of Oxidation State
Theoretical Si Core Levels the Change of Oxidation State
2010/9/17
The investigations of Si 1s and 2p photoelectron spectra of a poly-Si plate with natural oxide layers based on high energy excitation using X-ray tubes with three kinds of target (Mg Kα, Zr Lα and Ag ...
Analysis of Ultra-Thin HfO2/SiON/Si(001): Comparison of Three Different Techniques
Analysis of Ultra-Thin HfO2/SiON/Si(001): Comparison of Three Different Techniques
2010/9/17
Composition depth profiling of HfO2 (2.5 nm)/SiON (1.6 nm)/Si(001) was performed by three diffetent analytical techniques: high-resolution Rutherford backscattering spectroscopy (HRBS), angle-resolve...
利用固源分子束外延(SSMBE)生长技术, 在Si(111)衬底上预沉积不同厚度(0、0.2、1 nm)Ge, 在衬底温度900 ℃, 生长SiC单晶薄膜. 利用反射式高能电子衍射仪(RHEED)、原子力显微镜(AFM)和傅立叶变换红外光谱(FTIR)等实验技术, 对生长的样品进行了研究. 结果表明, 预沉积少量Ge(0.2 nm)的样品, SiC薄膜表面没有孔洞存在, AFM显示表面比较平整, ...
Si(CH3)2Cl2分子的电离电势和化学键能的测定
Si(CH3)2Cl2 同步辐射 光电离 电离电势 化学键键能
2009/12/7
Si(CH3)2Cl2分子的电离电势和化学键能的测定。