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Surface morphology of He-implanted single-crystalline silicon
crystalline silicon He ion implantation He bubble Cavities blisters morphology
2009/8/14
Single-crystalline Si (100) samples were implanted with 30 keV He2+ ions to doses ranging from 2.0×1016 to 2.0×1017ions /cm2 and subsequently thermally annealed at 800℃ for 30min. The morphological ch...