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Evaluation of Outermost Surface Temperature of Silicon Substrates during UV-Excited Ozone Oxidation at Low Temperature
Evaluation Outermost Surface Temperature Silicon UV-Excited Ozone Oxidation Low Temperature
2010/9/17
Using ultraviolet (UV)-excited ozone gas, we prepared high-quality SiO2 films that can be used as gate dielectric films on poly-silicon or silicon wafers without sample heating. The UV-excited ozone g...