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Active Pixel Sensors Fabricated in a Standard 0.18 urn CMOS Technology
CMOS APS image sensor dark current quantum efficiency photodiode photogate
2015/8/17
CMOS image sensors have benefited from technology scaling down to O.351um with only minor process modifications. Several studies have predicted that below O.25m, it will become difficult, if not impos...
Design of Low Noise SIPC LC-QVCO for IEEE 802.11a Application in 0.18μm CMOS Technology
LC-QVCO phase noise RF CMOS SIPC-QVCO
2010/2/2
This paper presents the design of a source injection
parallel coupled (SIPC) quadrature voltage controlled oscillator
(QVCO), realized in both −gm pMOS cross coupled switching stage
and m ...
A silicon LED in standard CMOS technology for optical interconnection
silicon LED CMOS optical interconnection
2010/7/16
A silicon light emitting device is designed and simulated. It is fabricated in 0.6μm standard CMOS technology. The device can give more than 1μW optical power of visible light under reverse breakdown....