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Spatial analysis from remotely sensed observations of Congo basin of East African high Land to drain water using gravity for sustainable management of low laying Chad basin of Central Africa
Analysis Combination Environment land Management Observations Remote sensing Sustainable
2014/12/4
The Chad basin which covers an area of about 2.4 million kilometer square is one of the largest drainage basins in Africa in the centre of Lake Chad .This basin was formed as a result of rifting and d...
Boundary-trapped, inhalant siphon and drain flows: Pipe entry revisited numerically
hydraulic entrance length siphon flow pipe entry inhalant siphon bifurcation,
2014/4/1
Flows produced in suspension feeding and tube and burrow ventilation cause and influence many exchange processes and chemical reactions. I investigated two geometries, a capillary drawing water far fr...
Simulating Water Flow to a Subsurface Drain in a Layered Soil
Drain discharge finite element layered soil HYDRUS-2D
2009/1/13
The objective of the work presented in this paper was to simulate drain flow into subsurface drainage pipes for a layered soil profile using a finite element based HYDRUS-2D model. Data from the drai...
Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep Submicrometer MOSFET'S
Submicrometer MOSFET’s Impact ionization Substrate current Temperature Channel length
2010/12/8
In this paper, a detailed experimental study of channel length, drain voltage and temperature dependence of substrate current Isub in submicrometer MOSFET's is presented. Impact ionization rate α is r...
A Physical Model for MOSFET Drain Current in Non-ohmic Regime Using Ohmic Regime Operation
MOSFET Velocity saturation Pinch off Conductance Charge
2010/12/8
In order to characterise the velocity saturation phenomena in short channel MOSFET's, a simple method is proposed in this work. It is based on the comparison between transistor behaviour in ohmic and ...
New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature
MOS transistor Drain saturation voltage Substrate current
2010/12/8
A new method for drain saturation voltage extraction in submicron MOSFETs is presented. It is based on measurements of the partial derivative of the impact ionization rate. The method has been tested ...