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Ti-doped In2O3 transparent conductive thin films with high transmittance and low resistivity
sputtering In2O3 transparent conductive oxide thin films
2011/5/9
Ti-doped In2O3 thin films have been prepared on glass substrate by radio frequency (RF)
sputtering with different sputtering powers (90, 120, 150, and 180 W) at 330 °C. The influence of
sputtering p...
Investigation of low-resistivity from hydrogenated lightly B-doped diamond by ion implantation
diamond hydrogenation low resistivity plane wave method
2010/10/13
We have implanted boron (B) ions (dosage: 5×1014 cm−2) into diamond and then hydrogenated the sample by implantating hydrogen ions at room temperature. A p-type diamond material with a low resis...