搜索结果: 1-4 共查到“光电探测器及光探测技术 WDM”相关记录4条 . 查询时间(0.096 秒)
A 400 Gb/s WDM Receiver Using a Low Loss Silicon Nitride AWG Integrated with Hybrid Silicon Photodetectors
A 400 Gb/s WDM Receiver a Low Loss Silicon Nitride AWG Integrated Hybrid Silicon Photodetectors
2014/11/6
A heterogeneously integrated WDM receiver based on an AWG demultiplexer and hybrid silicon/InGaAs detectors is presented in a novel platform that combines hybrid silicon components with ultra-low loss...
Demonstration of Simultaneous OSNR and CD Monitoring using Asynchronous Delay Tap Sampling on an 800 km WDM Test Bed
Simultaneous OSNR CD Monitoring Asynchronous Delay Tap Sampling WDM Test Bed
2015/7/20
We demonstrate simultaneous monitoring of OSNR and CD using asynchronous delay-tap sampling on a commercial WDM system. Accuracies of 0.5 dB for OSNR and 30 ps/nm for CD was obtained in the presence o...
自主创新WDM集成解复用光探测器和关键工艺研究
创新WDM 集成解复用 光探测器
2008/9/26
发明了一种新型腐蚀液，并且利用可控自推移动态掩膜湿法刻蚀技术在InP基的外延层上制作成功了倾角可控的各种楔形结构。制备成功的InP基楔形结构的倾角范围为0.5°~ 49.0°，表面粗糙度小于1.65nm。
自主创新WDM集成解复用光探测器和关键工艺研究
关键工艺 光探测器
2008/9/1
该项目发明了一种新型腐蚀液，并且利用可控自推移动态掩膜湿法刻蚀技术在InP基的外延层上制作成功了倾角可控的各种楔形结构。制备成功的InP基楔形结构的倾角范围为0.5°～49.0°，表面粗糙度小于1.65nm。发明了一种可用于GaAs/InP基材料之间低温、高质量晶片键合的简便且无毒性的新型表面化学处理工艺。在低达360℃的温度下实现了GaAs/InP基材料之间的高质量晶片键合，拉断实验的断裂面非键...