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n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices
Band-edge positions Polysiloxane Metalloporphyrin Modification n-GaAs Photoelectrochemistry
2010/12/7
Tetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of MnIII and MnII mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n -GaAs wafers. The n...
This paper considers the results of using tin or T/A platings as a substitute for gold in card-edge connectors. Measurements have been made on mated systems before and after various environmental test...