搜索结果: 1-8 共查到“电子科学与技术 Large”相关记录8条 . 查询时间(0.225 秒)
Behaviour of large scale structures of the electron content as a key parameterfor range errors in GNSS applications
parameterfor GNSS
2015/9/14
The Total Electron Content (TEC) of the ionosphere is a key parameter for describing the ionospheric state. This paper deals with the large scale behaviour of TEC under low and high solar activity con...
An efficient method for large-scale gate sizing
Combinational logic circuits geometric process circuit
2015/8/10
We consider the problem of choosing the gate sizes or scale factors in a combinational logic circuit in order to minimize the total area, subject to simple RC timing constraints, and a minimum allowed...
Researchers have made great progress in recent years in the design and creation of biological circuits — systems that, like electronic circuits, can take a number of different inputs and deliver a par...
Dual-use of compact HF radars for the detection of mid- and large-size vessels
HF radar object detection networks ocean currents remote sensing
2010/10/12
This paper describes the development of the SeaSonde High Frequency Radar system into a dual-use application for the mapping of ocean surface currents and detection of ships at sea. This development e...
The Characteristic Basis Function Method (CBFM): A Numerically Efficient Strategy for Solving Large Electromagnetic Scattering Problems
Characteristic Basis Functions Method of Moments Electromagnetic Scattering
2009/7/28
The objective of this paper is to describe a numerically efficient strategy for solving large electromagnetic scattering problems. This novel approach, termed as the Characteristic Basis Function Meth...
Structural and electronic properties of metal-encapsulated silicon clusters in a large size range
2007/7/28
专著信息
书名
Structural and electronic properties of metal-encapsulated silicon clusters in a large size range
语种
英文
撰写或编译
作者
Jing Lu,Shigeru Nagase
第一作者单位
出版社
Physical Review?Letters 90 , 115506 (2003).
出...
Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel Transistors
Hot-carrier degradation MOSFET gate geometry
2010/12/9
Device degradation due to hot-carrier in n-channel HEXFETs is shown to be related to the device geometrical structure. The form of I-V characteristics of the body-drain junction is found dependent of ...
A Large Scale Hybrid Thermal Print Head
heating resistor dots Hybrid Thermal Print Head film circuit substrate
2010/12/27
A high speed direct drive thermal print head, which prints across a 216 mm wide paper using 1728 heating resistor dots (8 dots/mm) has been developed.It can print 30 cm long paper in only a few second...