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期刊信息
篇名
First-principles study of electron-phonon coupling in hole- and electron-doped diamonds in the virtual crystal approximation
语种
英文
撰写或编译
撰写
作者
马琰铭,John S. Tse,等人
第一作者单位
吉林大学超硬材料国家重点实验室
刊物名称
Ph...
Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD
Delta-doped Resonant interband tunneling (RIT)
2010/12/7
An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak c...
Correlations Between the Thermoelectric Power and Hall Effect of SN- or GE-Doped IN2O3 Polycrystalline Ceramics
the Thermoelectric Power SN- or GE-Doped IN2O3 Polycrystalline Ceramics
2010/12/10
The thermoelectric power and Hall effect of Sn-or Ge-doped In2O3 ceramics are investigated based on a comparative study. The metal-type conductivity in both the samples occurs when the carrier concent...
Electronic Properties of Sn- or Ge-Doped In2O3 Semiconductors
Electronic Properties Sn- or Ge-Doped In2O3 Semiconductors
2010/12/15
The thermoelectric power and Hall effect of In2O3 single crystals, either undoped or Sn doped, and of In2O3 ceramics, either undoped or Sn or Ge doped, are investigated. All doped samples have negativ...
Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature
Sputtered Germanium-Doped Indium Tin Oxide Films Low Deposition Temperature
2010/12/16
Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. ...
The Textural Effect of Cu Doping and the Electronic Effect of Ti, Zr and Ge Dopings Upon the Physical Properties of In2O3 and Sn-Doped In2O3 Ceramics
Cu In2O3 Sn-Doped In2O3 Ceramics
2010/12/16
The electronic properties of Cu-, Ti-, Zr-, and Ge-doped In2O3 (IO) and ITO (Sn-doped In2O3) ceramics are investigated. We distinguish the different effect of Cu doping (so called the “textural effect...
Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium Oxide
Thermal Treatment Oxygen Pressures Tin-Doped Indium Oxide
2010/12/16
The different electronic behaviors of pure and tin-doped indium oxides with various thermal treatments under high and low oxygen pressure are discussed on the basis of the evolution of the band energy...