搜索结果: 1-9 共查到“电子科学与技术 beam”相关记录9条 . 查询时间(0.295 秒)
On the Retrieval of the Beam Transverse Wind Velocity Using Angles of Arrival from Spatially Separated Light Sources
Atmospheric Turbulence Optical Wave Propagation Wind Estimation Angle-of-Arrival Time-Delay-to-Peak Slope-at-Zero-Lag
2014/12/8
For optical propagation through the turbulent atmosphere, the angle of arrival (AOA) cross-correlation function obtained from two spatially separated light sources carries information regarding the tr...
BEAM STEERING CONTROL SYSTEM FOR LOW-COST PHASED ARRAY WEATHER RADARS: DESIGN AND CALIBRATION TECHNIQUES
Phased Arrays Electronically scanned antennas Radars T/R modules Phased array calibration Radar Calibration
2014/11/7
Phase array antennas are a promising technology for weather surveillance radars. Their fast beam steering capability offer the potential of improving weather observations and extending warning lead ti...
Over the past decade, physicists have been very successful at using optical lattices of ultracold atoms as "quantum simulators" to study interactions similar to those involved in superconductivity and...
Electron dose calculation using multiple-scattering theory: a hybrid electron pencil-beam model
2007/7/28
期刊信息
篇名
Electron dose calculation using multiple-scattering theory: a hybrid electron pencil-beam model
语种
中文
撰写或编译
撰写
作者
Luo Zhengming,David Jette,and Susan Walker
第一作者单位
刊物名称
Med. Phys
页面
出版日期
1998年...
GaAs Triac-like Triangular Barrier Switch Prepared by Molecular Beam Epitaxy
Negative differential resistance Avalanche multiplication
2010/12/8
A new S-shaped negative differential resistance (NDR) switching device, prepared by molecular beam epitaxy (MBE), has been successfully developed in a GaAs double triangular barrier structure. Symmetr...
Molecular Beam Epitaxy of HgCdTe for IR FPAs Detectors
Molecular Beam Epitaxy HgCdTe IR FPAs Detectors
2010/7/15
The recent progress in MBE growth of HgCdTe at the Epitaxy Research Center for Advanced Materials, and the National Laboratory for Infrared Physics is reported. It is found that the excellent composit...
N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Prepared by Molecular Beam Epitaxy
N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Molecular Beam Epitaxy
2010/12/10
N-channel lnGaAs quantum well lasing thyristors (QWLT) based on regenerative loop of potential barrier lowering resulted from the forward biased pn junction is demonstrated in a AlGaAs/GaAs double het...
Fabrication of AlGaInP/GaInP Laser Diodes by Molecular Beam Epitaxy
AlGaInP/GaInP Laser Molecular Beam Epitaxy
2010/12/10
Room temperature pulse operation for AlGaInP/GalnP visible laser diodes prepared by gas source molecular beam epitaxy (GSMBE) have been successfully fabricated and demonstrated. In this report, two ki...
Evaporation Characteristics of Electron Beam Gun Heated Sources
Electron Beam Gun Heated Sources the source-substrate geometry conical and cylindrical indentations
2010/12/23
Exact expressions for the thickness profile of thin films deposited using electron beam gun heated sources are obtained in terms of the source-substrate geometry. Calculations based on conical and cyl...