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Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature
Sputtered Germanium-Doped Indium Tin Oxide Films Low Deposition Temperature
2010/12/16
Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. ...
The Textural Effect of Cu Doping and the Electronic Effect of Ti, Zr and Ge Dopings Upon the Physical Properties of In2O3 and Sn-Doped In2O3 Ceramics
Cu In2O3 Sn-Doped In2O3 Ceramics
2010/12/16
The electronic properties of Cu-, Ti-, Zr-, and Ge-doped In2O3 (IO) and ITO (Sn-doped In2O3) ceramics are investigated. We distinguish the different effect of Cu doping (so called the “textural effect...
The Effect of Various Factors on the Resistance and TCR of RuO2 Thick Film Resistors—Relation Between the Electrical Properties and Particle Size of Constituents, the Physical Properties of Glass and Firing Temperature
RuO2 Thick Film Resistors Constituents Glass and Firing Temperature
2010/12/21
Thick film resistors were prepared with different variables, they included various conductive particle sizes, glass particle sizes, glass softening temperatures, thermal expansion coefficients of the ...
THE PHYSICAL PROPERTIES OF SEMICONDUCTING SULFIDES, SELENIDES AND TELLURIDES
THE PHYSICAL PROPERTIES SEMICONDUCTING SULFIDES SELENIDES TELLURIDES
2014/4/8
Research leading to an understanding of the fundamental properties of materials is becoming more and more an area of common interest which brings together the viewpoints of the traditional scientific ...