搜索结果: 1-3 共查到“电子科学与技术 relation”相关记录3条 . 查询时间(0.031 秒)
Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection
I–V characteristics MOS LDD Modeling Defects
2010/12/7
The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers,...
The Effect of Various Factors on the Resistance and TCR of RuO2 Thick Film Resistors—Relation Between the Electrical Properties and Particle Size of Constituents, the Physical Properties of Glass and Firing Temperature
RuO2 Thick Film Resistors Constituents Glass and Firing Temperature
2010/12/21
Thick film resistors were prepared with different variables, they included various conductive particle sizes, glass particle sizes, glass softening temperatures, thermal expansion coefficients of the ...
On Experimental Data of the TCR of TFRs and Their Relation to Theoretical Models of Conduction Mechanism
the TCR TFRs Conduction Mechanism
2010/12/23
Any theory of electrical conduction in TFRs encounters mainly two problems: (i) explanation of the dependence of R□ on properties of conducting component (volume fraction, grain size, resistivity), (i...