搜索结果: 1-12 共查到“半导体技术 analysis”相关记录12条 . 查询时间(0.393 秒)
Analysis of Active Pixel Sensor Readout Circuit
Active pixel sensor (APS) CMOS image sensor high-speed imaging readout electronics
2015/8/12
This brief provides a detailed analysis of active pixel sensor, pixel and column circuit. Surprisingly, we find that shorter readout times can be achieved by reducing the bias current and hence reduci...
Analysis of 1=f Noise in Switched MOSFET Circuits
1 noise CMOS image sensor nonstationary noise model periodically switched circuits phase noise ring oscillator time-domain noise analysis
2015/8/12
Analysis of 1 noise in MOSFET circuits is typically performed in the frequency domain using the standard stationary 1 noise model. Recent experimental results, however, have shown that the estimates u...
Fabrication and analysis of CIGS nanoparticle-based thin film solar cells
CIGS Solar Cell CIGS Nanoparticles Spray Deposition Thin Film Solar Cell
2015/1/20
Fabrication and analysis of Copper Indium Gallium di-Selenide (CIGS) nanoparticles-based thin film solar cells are presented and discussed. This work explores non-traditional fabrication processes, su...
Electromagnetic Side-Channel Analysis for Hardware and Software Watermarking
Side-Channel Analysis Electromagnetic side channel Trojans Watermarks
2014/12/8
With more and more ICs being used in sectors requiring confidentiality and integrity like payment systems, military, finance and health, there is a lot of concern in the security and privacy of ICs. T...
On Detection, Analysis and Characterization of Transient and Parametric Failures in Nano-scale CMOS VLSI
Automatic Test Pattern Generation Crosstalk Design-for-Testability Integrated Circuit Intermittent Failure Soft Error
2014/11/7
As we move deep into nanometer regime of CMOS VLSI (45nm node and below), the device noise margin gets sharply eroded because of continuous lowering of device threshold voltage together with ever incr...
The analysis of a semiconductor single asymmetric and symmetric step-index laser for even and odd fields by alpha method
Normalized frequency normalized propagation constant wave number confinement factor field probability ratio
2010/10/12
In this work, semiconductor step-index single waveguide has been analyzed by Alpha Method. A requested quantity of wave guide can be obtained in terms of normalized propagation constant, which is repr...
Theoretic analysis of all-optical wavelength converter based on single-port-coupled SOA
Semiconductor Optical Amplifier (SOA) Cross Gain Modulation (XGM)
2010/7/16
Novel all-optical wavelength converter (AOWC) based on cross gain modulation (XGM) in single-port-coupled semiconductor optical amplifier (SOA) was proposed, and a dynamic model was presented. Based o...
Return Loss Analysis and Experimental Study of Semiconductor Optical Amplifiers
SOA Return loss Residual reflectivity External cavity.
2010/7/16
Return loss of single semiconductor optical amplifier (SOA) module has been analysed in the
paper. The external cavity formed by residual reflectivity of coupling pigtail fibers is the obstacle to in...
COMPARATIVE ANALYSIS OF THE BEHAVIOR OF COAXIAL AND FRONTAL COUPLINGS – WITH PERMANENT MAGNETS – IN HIGH TEMPERATURE ENVIRONMENTS
permanent magnets permanent magnet couplings
2010/1/12
This paper presents a comparative analysis of the behavior of coaxial and frontal couplings – with permanent magnets – in high temperature environments specific to iron and steel industry. The compara...
Voltage-Controlled Small Signal Analysis of Real Space Transfer Transistor
Real space transfer (RST) Parameter extraction
2010/12/7
The research of determining the small signal equivalent circuit of the real space transfer (RST) transistor is investigated in this work. We propose a voltage-controlled mode model, called parameter e...
Analysis and Simulation of Functional Stress Degradation on VDOMS Power Transistors
Functional Stress VDOMS Power Transistors
2010/12/7
The use of VDMOS transistor under certain functional stress conditions produces a modification of its physical and electrical properties. This paper explores the physical analysis and SPICE simulation...
Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel Transistors
Hot-carrier degradation MOSFET gate geometry
2010/12/9
Device degradation due to hot-carrier in n-channel HEXFETs is shown to be related to the device geometrical structure. The form of I-V characteristics of the body-drain junction is found dependent of ...