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An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices
Drain saturation voltage Critical field Substrate current Effective mobility
2010/12/8
In this letter, an accurate method for extracting the critical field Ec in short channel MOSFET's is presented. The principle of this method is based on the comparison between two models which give dr...
New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature
MOS transistor Drain saturation voltage Substrate current
2010/12/8
A new method for drain saturation voltage extraction in submicron MOSFETs is presented. It is based on measurements of the partial derivative of the impact ionization rate. The method has been tested ...